Datasheet > 100BGQ045_11

100BGQ045_11

更新时间： 2022-09-10 17:15:58

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	134K
描述
Schottky Rectifier, 100 A

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数据手册

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100BGQ045_11 数据手册

VS-100BGQ045

Vishay Semiconductors

www.vishay.com

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

0.54

0.69

0.48

0.65

600

MAX.

0.58

0.77

0.52

0.71

1000

UNITS

50 A

T_J= 25 °C

100 A

50 A

(1)

Forward voltage drop

V_FM

T_J= 150 °C

100 A

T_J= 150 °C, V_R= 45 V

T_J= 25 °C

(1)

Reverse leakage current

I_RM

0.3

V_R= Rated V_R

T_J= 125 °C

180

320

Maximum junction capacitance

Typical series inductance

C_T

L_S

V_R= 5 V_DC, (test signal range 100 kHz to 1 MHz) 25 °C

Measured from tab to mounting plane

Rated V_R

2700

3.5

Maximum voltage rate of change

dV/dt

10 000

V/μs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

T_J, T_Stg

- 55 to 150

0.50

°C

Maximum thermal resistance,

junction to case

R_thJC

R_thCS

DC operation

Mounting surface, smooth and greased

°C/W

Typical thermal resistance,

case to heatsink

0.30

Approximate weight

0.18

oz.

minimum

maximum

1.2 (10)

2.4 (20)

N · m

Mounting torque

Marking device

(lbf · in)

Case style PowerTab^®

100BGQ045

Revision: 17-Jun-11

Document Number: 94580

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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