Datasheet > 100BGQ100_11

100BGQ100_11

更新时间： 2022-09-10 17:16:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	135K
描述
Schottky Rectifier, 100 A

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100BGQ100_11 数据手册

VS-100BGQ100

Vishay Semiconductors

www.vishay.com

Schottky Rectifier, 100 A

FEATURES

• 175 °C max. operating junction temperature

• High frequency operation

• Low forward voltage drop

• Continuous high current operation

Cathode

Anode

• Guard ring for enhanced ruggedness and long

term reliability

PowerTab^®

• Screw mounting only

• Designed and qualified according to JEDEC-JESD47

• PowerTab^®package

PRODUCT SUMMARY

Package

PowerTab^®

• Compliant to RoHS Directive 2002/95/EC

I_F(AV)

100 A

100 V

0.82 V

DESCRIPTION

The VS-100BGQ100 Schottky rectifier has been optimized

for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable

operation up to 175 °C junction temperature. Typical

applications are in switching power supplies, converters,

reverse battery protection, and redundant power

subsystems.

V_R

V_Fat I_F

I_RM

180 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Single die

9 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

100

UNITS

Rectangular waveform

°C

I_F(AV)

T_C

124

V_RRM

I_FSM

100

t_p= 5 μs sine

100 A_pk(typical)

T_J

6300

0.77

V_F

T_J

125

°C

Range

- 55 to 175

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

100BGQ100

UNITS

Maximum DC reverse voltage

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

50 % duty cycle at T_C= 124 °C, rectangular waveform

100

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

6300

Maximum peak one cycle

non-repetitive surge current

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 2 A, L = 4.5 mH

800

V_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 17-Jun-11

Document Number: 94581

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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