Datasheet > 100BGQ100_11

100BGQ100_11

更新时间： 2022-09-10 17:16:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	135K
描述
Schottky Rectifier, 100 A

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100BGQ100_11 数据手册

VS-100BGQ100

Vishay Semiconductors

www.vishay.com

180

160

140

120

100

120

100

180°

120°

90°

60°

30°

RMS Limit

Square wave (D=0.50)

80% rated Vr applied

see note (1)

20 40 60 80 100 120 140 160

AverageForwardCurrent-IF_(AV)(A)

Fig. 6 - Forward Power Loss Characteristics

120

150

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

10000

1000

At Any Rated Load Condition

And With Rated V

Fo llo w in g Surg e

Applied

RRM

100

1000

10000

Square Wave Pulse Duration - t (microsec)

Fig. 7 - Maximum Non-Repetitive Surge Current

High-speed

switch

IRFP460

D.U.T.

Freewheel

diode

R_g= 25 Ω

_d= 25 V

Current

monitor

40HFL40S02

Fig. 8 - Unclamped Inductive Test Circuit

Note

(1)

Formula used: T_C= T_J- (Pd + Pd_REV) x R_thJC

;

Pd = Forward power loss = I_F(AV)x V_FMat (I_F(AV)/D) (see fig. 6);

Pd_REV= Inverse power loss = V_R1x I_R(1 - D); I_Rat V_R1= 80 % rated V_R

Revision: 17-Jun-11

Document Number: 94581

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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