Datasheet > 1002MP_10

1002MP_10

更新时间： 2024-11-18 07:23:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		脉冲电子航空
页数	文件大小	规格书
3页	124K
描述
2 Watts, 35 Volts Pulsed Avionics at 960-1215 MHz

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1002MP_10 数据手册

1002MP

2 Watts, 35 Volts

Pulsed Avionics at 960-1215 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55FW-1

The 1002MP is a COMMON BASE transistor capable of providing 2 Watts of

pulsed RF output power in the band 960 to 1215 MHz. This transistor is

specifically designed for pulsed Avionics amplifier applications. It utilizes gold

metallization and low thermal resistance packaging to provide high reliability

and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C

7 W

Maximum Voltage and Current

Collector to Base Voltage (BV_ces)

50 V

3.5 V

250 mA

Emitter to Base Voltage (BV_ebo

Collector Current (I_c)

)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-40 to +150 °C

+200 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_out

P_in

P_g

Power Output

Power Input

F = 1150 MHz

2.0

0.3

Power Gain

V_cc= 35 Volts

8.24

Collector Efficiency

η_c

Pulse width = 20 µs

LTDF = 1%

VSWR

Load Mismatch Tolerance

10:1

FUNCTIONAL CHARACTERISTICS @ 25°C

BV_ebo

BV_ces

h_FE

Emitter to Base Breakdown

Ie = 1 mA

3.5

Collector to Emitter Breakdown Ic = 5 mA

DC – Current Gain

Capacitance

Vce = 5V, Ic = 100 mA

Vcb=35V, f=1MHz

C_ob

θjc¹

2.2

5.0

Thermal Resistance

°C/W

Rev B: August 2010

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

12 3

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