Datasheet > 10-PD074PA075SM-L625F07Y

10-PD074PA075SM-L625F07Y

更新时间： 2023-09-03 20:31:17

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
19页	6859K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-PD074PA075SM-L625F07Y 数据手册

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10-PD074PA075SM-L625F07Y

datasheet

H-Bridge Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

200

V_GE

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

150

100

150

100

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

_CE(V)

V_CE(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 9 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

-1

0,5

0,2

0,1

-2

0,05

0,02

0,01

0,005

-3

-5

-4

-3

-2

-1

t_p(s)

_GE(V)

t_p

V_CE

250

μs

D =

t_p/ T

1,057

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

1,05E-01

2,95E-01

4,07E-01

1,50E-01

3,75E-02

6,12E-02

8,62E-01

1,39E-01

4,84E-02

1,04E-02

2,37E-03

2,88E-04

26 Jun. 2020 / Revision 1

1...4 5 678 9 10...19

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