Datasheet > 10-PD074PA075SM-L625F07Y

10-PD074PA075SM-L625F07Y

更新时间： 2023-09-03 20:31:17

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
19页	6859K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-PD074PA075SM-L625F07Y 数据手册

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10-PD074PA075SM-L625F07Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

H-Bridge Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,00075 25

3,3

4,7

1,67

1,84

1,89

2,22⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

µA

120

None

4300

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

Reverse transfer capacitance

Gate charge

V_CC= 520 V

166

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,06

K/W

t_d(on)

Turn-on delay time

Rise time

125

150

49,2

9,8

t_r

125

150

12,4

13,4

66,6

78,6

R_gon= 2 Ω

R_goff= 2 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

±15

350

4,97

7,23

8,48

0,644

0,982

1,08

0,269

0,524

0,596

t_f

125

150

Q_rFWD=2,53 µC

Q_rFWD=4,54 µC

Q_rFWD=5,21 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

26 Jun. 2020 / Revision 1

1 2 345 6 7...19

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