Datasheet > 10-PD074PA075SM-L625F07Y

10-PD074PA075SM-L625F07Y

更新时间： 2023-09-03 20:31:17

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
19页	6859K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-PD074PA075SM-L625F07Y 数据手册

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10-PD074PA075SM-L625F07Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

H-Bridge Diode

Static

1,53

1,49

1,46

1,92⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 650 V

3,8

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,34

K/W

90,26

110,59

117,11

51,24

82,54

93,03

2,53

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=7979 A/µs

di/dt=6480 A/µs

di/dt=6720 A/µs

Q_r

Recovered charge

±15

350

125

150

4,54

μC

5,21

0,578

1,07

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

1,24

3574

2005

2114

(di_rf/dt)_max

125

150

26 Jun. 2020 / Revision 1

1 2 3 456 7 8...19

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