Datasheet > 10-FZ12B2A080MR04-P629L82

10-FZ12B2A080MR04-P629L82

更新时间： 2023-09-03 20:33:39

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	7950K
描述
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode

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10-FZ12B2A080MR04-P629L82 数据手册

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10-FZ12B2A080MR04-P629L82

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

ByPass Diode

Static

0,996

0,907

1,21⁽¹⁾

1,1⁽¹⁾

V_F

I_R

Forward voltage

125

Reverse leakage current

V_r= 1600 V

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,59

K/W

Thermistor

Static

Δ_R/R

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

kΩ

R₁₀₀= 1484 Ω

100

-5

mW/K

1,5

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

Vincotech Thermistor Reference

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

20 Jul. 2021 / Revision 2

1...3 4 567 8 9...20

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