Datasheet > 10-FZ12B2A080MR04-P629L82

10-FZ12B2A080MR04-P629L82

更新时间： 2023-09-03 20:33:39

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	7950K
描述
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode

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10-FZ12B2A080MR04-P629L82 数据手册

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10-FZ12B2A080MR04-P629L82

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Boost Switch

Static

100⁽¹⁾

r_DS(on)

Drain-source on-state resistance

125

150

127

144

mΩ

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

Gate charge

0,0005

2,7

5,6

100

µA

Ω

1200

785

Q_g

Q_GS

Q_GD

C_iss

C_oss

C_rss

Gate to source charge

V_DD= 600 V

Gate to drain charge

Short-circuit input capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Thermal

f = 1 Mhz

800

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,67

K/W

12,8

12,16

11,84

6,72

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

6,72

R_gon= 8 Ω

R_goff= 8 Ω

53,76

62,72

64,96

21,3

t_d(off)

Turn-off delay time

Fall time

125

150

0/18

700

t_f

125

150

22,3

20,74

0,202

0,192

0,19

Q_rFWD=0,128 µC

Q_rFWD=0,131 µC

Q_rFWD=0,132 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

0,128

0,146

0,151

E_off

125

150

20 Jul. 2021 / Revision 2

1 2 345 6 7...20

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