Datasheet > 10-FZ071SA075S501-L525L58

10-FZ071SA075S501-L525L58

更新时间： 2023-09-03 20:25:08

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
22页	7848K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

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10-FZ071SA075S501-L525L58

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

1,53

1,49

1,46

1,92⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 650 V

3,8

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,22

K/W

92,46

115,92

122,8

52,47

83,93

94,03

2,49

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=8536 A/µs

di/dt=6881 A/µs

di/dt=6458 A/µs

Q_r

Recovered charge

0/15

350

125

150

4,66

μC

5,38

0,672

1,27

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

1,46

2911

2634

2713

(di_rf/dt)_max

125

150

20 Sep. 2021 / Revision 2

1 2 3 456 7 8...22

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