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10-FZ071SA075S501-L525L58 PDF预览

10-FZ071SA075S501-L525L58

更新时间: 2023-09-03 20:25:08
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VINCOTECH /
页数 文件大小 规格书
22页 7848K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

10-FZ071SA075S501-L525L58 数据手册

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10-FZ071SA075S501-L525L58  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00075 25  
25  
3,2  
4
4,8  
V
V
1,56  
1,56  
1,59  
1,75(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
50  
µA  
nA  
Ω
20  
25  
100  
None  
4500  
130  
17  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
VCC = 520 V  
15  
75  
164  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,1  
K/W  
25  
23,6  
23,8  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
23,6  
10,8  
tr  
125  
150  
25  
12  
12,4  
Rgon = 4 Ω  
Rgoff = 4 Ω  
126,6  
145,4  
149,8  
22,44  
30,04  
36,41  
0,379  
0,605  
0,681  
0,854  
1,24  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
350  
75  
tf  
125  
150  
25  
ns  
QrFWD=2,49 µC  
QrFWD=4,66 µC  
QrFWD=5,38 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
1,36  
Copyright Vincotech  
4
20 Sep. 2021 / Revision 2  

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