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10-FY07NIB080SM03-L095F03 PDF预览

10-FY07NIB080SM03-L095F03

更新时间: 2023-06-19 15:37:31
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VINCOTECH /
页数 文件大小 规格书
11页 477K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

10-FY07NIB080SM03-L095F03 数据手册

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10-FY07ZAB075SM-L515B08  
target datasheet  
H-Bridge Switch Lo/Hi Side  
Parameter  
Value  
Unit  
Symbol  
Conditions  
VGE [V] VCE [V] IC [A] Tj[ °C]  
Min  
Typ  
Max  
Static  
25  
0,00075  
125  
3,3  
4
4,7  
Gateꢀemitter threshold voltage  
=
V
V
VGE VCE  
V
GE(th)  
25  
1,67  
1,84  
1,89  
2,22  
Collectoremitter saturation voltage  
15  
75  
125  
150  
25  
V
CEsat  
40  
Collectoremitter cutꢀoff current  
Gateꢀemitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
µA  
nA  
I
CES  
125  
25  
120  
20  
I
GES  
125  
none  
4300  
75  
rg  
C
C
C
ies  
oes  
res  
Output capacitance  
f=1 MHz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
16  
15  
520  
75  
166  
nC  
Q
g
Thermal  
phaseꢀchange  
material  
Thermal resistance junction to sink  
1,14  
K/W  
R
th(j-s)  
ʎ
=3,4W/mK  
H-Bridge Diode Lo/Hi Side  
Symbol  
Parameter  
Conditions  
Value  
Typ  
Unit  
V
T
r [V] IF [A] j [°C] Min  
Max  
Static  
25  
1,46  
1,42  
1,40  
1,82  
0,9  
Forward voltage  
Reverse leakage current  
75  
125  
150  
25  
V
VF  
650  
µA  
Ir  
150  
Thermal  
phaseꢀchange  
material  
Thermal resistance junction to sink  
1,22  
K/W  
R th(j-s)  
ʎ
=3,4W/mK  
Copyright Vincotech  
7
26 Aug. 2015 / Revision 1  

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