Datasheet > 10-FY07NIB080SM03-L095F03

10-FY07NIB080SM03-L095F03

更新时间： 2023-06-19 15:37:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
11页	477K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FY07ZAB075SM-L515B08

target datasheet

H-Bridge Switch Lo/Hi Side

Parameter

Value

Unit

Symbol

Conditions

V_GE[V] V_CE[V] I_C[A] T_j[ °C]

Min

Typ

Max

Static

0,00075

125

3,3

4,7

Gateꢀemitter threshold voltage

V_GEV_CE

GE(th)

1,67

1,84

1,89

2,22

Collectorꢀemitter saturation voltage

125

150

CEsat

Collectorꢀemitter cutꢀoff current

Gateꢀemitter leakage current

Internal gate resistance

Input capacitance

650

µA

ꢁ

CES

125

120

GES

125

none

4300

r_g

ies

oes

res

Output capacitance

f=1 MHz

Reverse transfer capacitance

Gate charge

520

166

Thermal

phaseꢀchange

material

Thermal resistance junction to sink

1,14

K/W

th(j-s)

=3,4W/mK

H-Bridge Diode Lo/Hi Side

Symbol

Parameter

Conditions

Value

Typ

Unit

_r[V] I_F[A] _j[°C] Min

Max

Static

1,46

1,42

1,40

1,82

0,9

Forward voltage

Reverse leakage current

125

150

V_F

650

µA

I_r

150

Thermal

phaseꢀchange

material

Thermal resistance junction to sink

1,22

K/W

R _th(j-s)

=3,4W/mK

26 Aug. 2015 / Revision 1

1...4 5 678 9 10 11

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