Datasheet > 10-FY07NIB080SM03-L095F03

10-FY07NIB080SM03-L095F03

更新时间： 2023-06-19 15:37:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
11页	477K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FY07ZAB075SM-L515B08

target datasheet

PFC Diode

Symbol

Parameter

Conditions

Value

Typ

Unit

_r[V] I_F[A] _j[°C] Min

Max

Static

2,30

1,94

1,86

2,6

Forward voltage

Reverse leakage current

125

150

V_F

650

µA

I_r

150

Thermal

phaseꢀchange

material

Thermal resistance junction to sink

1,14

K/W

R _th(j-s)

=3,4W/mK

C. T. Protection Diode

Conditions

Value

Typ

Parameter

Symbol

Unit

_j[°C]

_r[V] I_F[A]

Min

Max

Static

1,67

1,56

1,87

0,14

Forward voltage

Reverse leakage current

125

150

V_F

650

µA

I_rm

150

Thermal

phaseꢀchange

material

Thermal resistance junction to sink

2,87

K/W

R_th(j-s)

=3,4W/mK

26 Aug. 2015 / Revision 1

1...3 4 567 8 9...11

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