Datasheet > 10-FY07NIB080SM03-L095F03

10-FY07NIB080SM03-L095F03

更新时间： 2023-06-19 15:37:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
11页	477K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FY07ZAB075SM-L515B08

target datasheet

Characteristic Values

Rectifier Diode

Symbol

Parameter

Conditions

Value

Typ

Unit

_r[V] I_F[A] _j[°C] Min

Max

Static

1,07

1,13

1,21

Forward voltage

Reverse leakage current

125

150

V_F

1600

µA

I_r

145

1100

Thermal

phaseꢀchange

material

Thermal resistance junction to sink

0,82

K/W

R _th(j-s)

=3,4W/mK

PFC Switch

Parameter

Value

Unit

Symbol

Conditions

V _GE[V] V _CE[V] I _C[A] T _j[ °C]

Min

Typ

Max

Static

0,001

3,2

4,8

2,1

Gateꢀemitter threshold voltage

V_GEV_CE

GE(th)

125

1,40

1,48

1,50

Collectorꢀemitter saturation voltage

100

125

150

CEsat

100

Collectorꢀemitter cutꢀoff current

Gateꢀemitter leakage current

Internal gate resistance

Input capacitance

650

µA

ꢁ

CES

125

GES

125

none

6560

r_g

ies

oes

res

Output capacitance

f=1 MHz

Reverse ansfer capacitance

t_r

Gate charge

520

100

210

Thermal

PhaseꢀChange

Material

Thermal resistance junction to sink

0,97

K/W

th(j-s)

=3,4W/mK

26 Aug. 2015 / Revision 1

1 2 3 456 7 8...11

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