Datasheet > 10-FY07NBA160RV-M506L78

10-FY07NBA160RV-M506L78

更新时间： 2023-09-03 20:31:20

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	1614K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

10-FY07NBA160RV-M506L78 数据手册

浏览型号10-FY07NBA160RV-M506L78的Datasheet PDF文件第1页

浏览型号10-FY07NBA160RV-M506L78的Datasheet PDF文件第2页

浏览型号10-FY07NBA160RV-M506L78的Datasheet PDF文件第3页

浏览型号10-FY07NBA160RV-M506L78的Datasheet PDF文件第5页

浏览型号10-FY07NBA160RV-M506L78的Datasheet PDF文件第6页

10-FY07NBA160RV-M506L78

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Boost Diode

Static

125

150

1,53

1,49

1,47

1,92

7,6

Forward voltage

V_F

I_R

150

Reverse leakage current

650

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

0,75

K/W

Dynamic

103

110

I_RRM

125

150

Peak recovery current

t_rr

Q_r

Reverse recovery time

125

150

125

150

125

150

125

150

104

116

di/dt = 5969 A/μs

di/dt = 5231 A/μs 0 / 15

di/dt = 5177 A/μs

4,07

8,28

9,65

0,976

1,93

2,29

5263

5407

4815

400

160

Recovered charge

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

(di_rf/dt)_max

Boost Sw. Protection Diode

Static

150

1,64

1,56

1,87

0,36

V_F

I_R

Forward voltage

Reverse leakage current

Thermal

650

µA

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

1,80

K/W

18 May. 2018 / Revision 1

1 2 345 6 7...18

中文翻译

下载PDF

与10-FY07NBA160RV-M506L78相关器件

型号	品牌	描述	获取价格	数据表
10-FY07NBA225S502-M507L98	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NIA100S503-M515F58	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NIA150S502-L365F58	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NIA150S5-M516F58	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NIB080SM03-L095F03	VINCOTECH	High efficiency in hard switching and resonant topologies;High speed switching;Low gate ch	获取价格
10-FY07NIB200RG-LH46F68	VINCOTECH	High efficiency in hard switching and resonant topologies;High speed switching;Low gate ch	获取价格