Datasheet > 10-F0122PA150SC-P990F09

10-F0122PA150SC-P990F09

更新时间： 2024-02-15 11:07:01

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VINCOTECH		栅
页数	文件大小	规格书
15页	379K
描述
Insulated Gate Bipolar Transistor

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技术参数
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10-F0122PA150SC-P990F09 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

10-F0122PA150SC-P990F09 数据手册

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FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 25

Output inverter IGBT

Figure 26

Output inverter IGBT

Gate voltage vs Gate charge

Safe operating area as a function

of collector-emitter voltage

I_C= f(V_CE

)

V_GE= f(Q_GE

)

10³

10uS

100uS

10²

240V

960V

1mS

10mS

100mS

10¹

10⁰

10^-1

50 100 150 200 250 300 350 400 450 500 550 600 650 700 750

Q _g(nC)

10⁰

10¹

10²

10³

V_CE(V)

I_C

D =

T_h=

150

single pulse

ºC

V_GE

T_j=

±15

T_jmax

ºC

Revision: 1

1...7 8 91011 12 13...15

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