Datasheet > 10-EZ126PA035M7-L859F78T

10-EZ126PA035M7-L859F78T

更新时间： 2023-09-03 20:25:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	3330K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

10-EZ126PA035M7-L859F78T 数据手册

浏览型号10-EZ126PA035M7-L859F78T的Datasheet PDF文件第2页

浏览型号10-EZ126PA035M7-L859F78T的Datasheet PDF文件第3页

浏览型号10-EZ126PA035M7-L859F78T的Datasheet PDF文件第4页

浏览型号10-EZ126PA035M7-L859F78T的Datasheet PDF文件第6页

浏览型号10-EZ126PA035M7-L859F78T的Datasheet PDF文件第7页

10-EZ126PA035M7-L859F78T

10-E1126PA035M7-L859F78Z

datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I _C= f(V_CE

)

I _C= f(V_CE)

120

V_GE

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

V_{C E}(V)

t_p

250

μs

25 °C

125 °C

150 °C

t_p

250

150

μs

°C

V_GE

T_j:

T_j=

V_GEfrom

7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as function of pulse duration

I _C= f(V_GE

)

Z _th(j-s)= f(t_p)

10⁰

10^-1

0,5

0,2

0,1

0,05

0,02

0,01

0,005

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t_p(s)

10²

V_{G E}(V)

t_p

100

μs

25 °C

125 °C

150 °C

D =

R _th(j-s)

t_p/ T

V_CE

T_j:

0,88

K/W

IGBT thermal model values

R (K/W)

τ (s)

4,21E-02

8,81E-02

2,30E-01

3,79E-01

9,10E-02

4,73E-02

5,44E+00

8,75E-01

1,59E-01

4,61E-02

6,73E-03

6,45E-04

27 May. 2019 / Revision 4

1 2 3 456 7 8...16

下载PDF

与10-EZ126PA035M7-L859F78T相关器件

型号	品牌	描述	获取价格	数据表
10-EZ126PA035SC-L859F48T	VINCOTECH	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem	获取价格
10-EZ126PA050M7-L850F78T	VINCOTECH	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem	获取价格
10-EZ126PA080MS-LS17F78T	VINCOTECH	SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC	获取价格
10-EZ126PB032ME-LS18F08T	VINCOTECH	SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC	获取价格
10-EZ126PB075ME-LS17F08T	VINCOTECH	High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech	获取价格
10-EZ126TA025SC-L858F43T	VINCOTECH	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem	获取价格