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10-EZ126PA035M7-L859F78T PDF预览

10-EZ126PA035M7-L859F78T

更新时间: 2023-09-03 20:25:03
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
16页 3330K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

10-EZ126PA035M7-L859F78T 数据手册

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10-EZ126PA035M7-L859F78T  
10-E1126PA035M7-L859F78Z  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,0035 25  
25  
5,4  
6,0  
6,6  
V
V
1,48  
1,64  
1,68  
1,85  
Collector-emitter saturation voltage  
VCEsat  
15  
35  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
80  
µA  
nA  
Ω
20  
25  
500  
none  
7900  
270  
97  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
#VALUE!  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
600  
35  
260  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,88  
K/W  
25  
223  
240  
233  
28  
Turn-on delay time  
td(on)  
125  
150  
25  
Rise time  
tr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
34  
35  
Rgon = 16 Ω  
Rgoff = 16 Ω  
ns  
227  
252  
259  
97  
114  
123  
2,45  
3,23  
3,44  
2,46  
3,24  
Turn-off delay time  
Fall time  
td(off)  
±15  
600  
35  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 3,8 μC  
= 5,8 μC  
= 6,4 μC  
Turn-on energy (per pulse)*  
Eon  
mWs  
125  
Eoff  
Turn-off energy (per pulse)*  
* Ls = 14 nH  
150  
3,46  
Copyright Vincotech  
3
27 May. 2019 / Revision 4  

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