Datasheet > 10-EZ126PA035M7-L859F78T

10-EZ126PA035M7-L859F78T

更新时间： 2023-09-03 20:25:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	3330K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-EZ126PA035M7-L859F78T

10-E1126PA035M7-L859F78Z

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Inverter Diode

Static

125

150

1,66

1,76

1,75

2,1

V_F

I_R

Forward voltage

Reverse leakage current

1200

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

1,22

K/W

Dynamic

I_RRM

125

150

125

150

125

150

125

150

Peak recovery current

267

425

450

3,80

5,84

6,39

1,48

2,39

2,60

485

353

343

t_rr

Q_r

Reverse recovery time

di/dt = 1364 A/μs

di/dt = 1192 A/μs ±15

di/dt = 1157 A/μs

600

Recovered charge

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

(di_rf/dt)_max

125

150

Thermistor

Rated resistance

Δ_R/R

100

kΩ

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

R₁₀₀= 493 Ω

-5

245

1,4

mW/K

B_(25/50)Tol. ±2 %

B_(25/100)Tol. ±2 %

3375

3437

B-value

Vincotech NTC Reference

27 May. 2019 / Revision 4

1 2 345 6 7...16

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