Datasheet > 1.5KE82C

1.5KE82C

更新时间： 2024-11-16 14:47:31

品牌	Logo	应用领域
鲁光 - LGE		瞬态抑制二极管
页数	文件大小	规格书
4页	750K
描述
瞬态抑制二极管

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1.5KE82C 技术参数

Case Style：	DO-27	Ppk(W)：	1500
MIN_(V)：	73.80	MAX_(V)：	90.20
Vwm_(V)：	66.4	Ir_(uA)：	1
Ippm_(A)：	12.71	Vc_(V)：	118.0
class：	Diodes

1.5KE82C 数据手册

1.5KE SERIES

1500 WattsTransient Voltage SuppressorDiodes

DO-27

Features

ꢀ

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

(

)

ꢀ

1500W surge capability at 10 x 1000 us

waveform

Excellent clamping capability

.042 1.10

.037

DIA.

(0.90)

1.0 (25.4)

MIN.

ꢀ

Low Dynamic impedance

Fast response time: Typically less than 1.0ps

from 0 volts to VBR for unidirectional and 5.0 ns

for bidirectional

Typical I_Rless than 1uA above 10V

High temperature soldering guaranteed:

260^oC / 10 seconds / .375”,(9.5mm) lead length

/ 5lbs.,(2.3kg) tension

.375 (9.5)

.335 (8.5)

(

)

.210 5.3

DIA.

(

)

.190 4.8

ꢀ

1.0 (25.4)

MIN.

Mechanical Data

ꢀ

Case: Molded plastic

Dimensions in inches and (millimeters)

ꢀ

Polarity: Color band denotes cathode except

bipolar

Maximum Ratings and Electrical Characteristics

Rating at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol

Value

Minimum1500

Units

Watts

Peak Power Dissipation at T_A=25^oC, Tp=1ms (Note 1)

P_PK

Steady State Power Dissipation at T_L=75 ^oC

Lead Lengths .375”, 9.5mm (Note 2)

P_D

6.5

Watts

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load

(JEDEC method) (Note 3)

I_FSM

200

Amps

Maximum Instantaneous Forward Voltage at 50.0A for

Unidirectional Only (Note 4)

V_F

3.5 / 5.0

Volts

^oC

Operating and Storage Temperature Range

T_J, T_STG

-55 to + 175

Notes:

1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T_A=25^oC Per Fig. 2.

2. Mounted on Copper Pad Area of 0.6 x 0.6” (16 x 16 mm) Per Fig. 4.

3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes

Maximum.

≤

4. V_F=3.5V for Devices of V_BR200V and V_F=5.0V Max. for Devices V_BR>200V.

Devices for Bipolar Applications

1. For Bidirectional Use C or CA Suffix for Types 1.5KE6.8 through Types 1.5KE440.

2. Electrical Characteristics Apply in Both Directions.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3 4

中文翻译

下载PDF

与1.5KE82C相关器件

型号	品牌	获取价格	描述	数据表
1.5KE82-C	COMCHIP	获取价格	1500W Transient Voltage Suppressor
1.5KE82C.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-201
1.5KE82C/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, PL
1.5KE82C/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon
1.5KE82C/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, PL
1.5KE82C/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, PL
1.5KE82C/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, PL
1.5KE82C/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 66.4V V(RWM), Bidirectional,
1.5KE82C/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, PL
1.5KE82C/62	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, PL

与1.5KE82C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

1.5KE82C

1.5KE82C 技术参数

1.5KE82C 数据手册

与1.5KE82C相关器件

与1.5KE82C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1.5KE82C

1.5KE82C 技术参数

1.5KE82C 数据手册

与1.5KE82C相关器件

与1.5KE82C相关文章

您还可以找

您在本页遇到什么问题？