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1.5KE47A-T PDF预览

1.5KE47A-T

更新时间: 2024-11-29 19:35:55
品牌 Logo 应用领域
RECTRON 局域网二极管
页数 文件大小 规格书
5页 41K
描述
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

1.5KE47A-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.01Is Samacsys:N
其他特性:LOW ZENER IMPEDANCE最大击穿电压:49.4 V
最小击穿电压:44.7 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):265
极性:UNIDIRECTIONAL最大功率耗散:6.5 W
认证状态:Not Qualified表面贴装:NO
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1.5KE47A-T 数据手册

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TVS  
1.5KE  
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
SERIES  
GPP TRANSIENT VOLTAGE SUPPRESSOR  
1500 WATT PEAK POWER 5.0 WATTS STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory certificate  
* Glass passivated chip construction  
* 1500 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
1.5KE  
* Fast response time  
(
)
.042 1.07  
.038  
DIA.  
(0.96)  
1.0 (25.4)  
MIN.  
.375 (9.5)  
.285 (7.2)  
(
)
.210 5.3  
Ratings at 25 oC ambient temperature unless otherwise specified.  
DIA.  
(
)
.190 4.8  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load,  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA suffix for types 1.5KE 6.8 thru 1.5KE 450  
Electrical characteristics apply in both direction  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
VALUE  
UNITS  
Watts  
RATINGS  
P
PPM  
Minimum 1500  
Peak Power Dissipation at T  
A
= 25o  
C
, T  
P = 1mS ( Note 1 )  
Steady State Power Dissipation at T  
.375” ( 9.5 mm ) ( Note 2 )  
L
= 75oC lead lengths,  
P
M(AV)  
5.0  
Watts  
Amps  
Peak Forward Surge Current, 8.3ms single half sine wave-  
I
FSM  
200  
superimposed on rated load( JEDEC METHOD ) unidirectional only  
Maximum Instantaneous Forward Current at 50.0A for  
unidirectional only ( Note 3 )  
V
F
3.5/5.0  
Volts  
0 C  
T
J
, TSTG  
-55 to + 150  
Operating and Storage Temperature Range  
2002-12  
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T  
A
= 25oC per Fig.2.  
2. Mounted on copper pad area of 0.8X0.8” ( 20X20mm ) per Fig.5.  
3. V = 3.5V for devices of V(BR) < 200V and V = 5.0 Volts max.for devices of V(BR) > 200V.  
F
F

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