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1.5KE200AG

更新时间： 2024-01-30 16:28:04
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管
页数 文件大小 规格书
7页 77K
描述
1500 Watt Mosorb TM Zener Transient Voltage Suppressors

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1.5KE200AG 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.17
Is Samacsys：N击穿电压标称值：200 V
最大钳位电压：287 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：e3极性：UNIDIRECTIONAL
最大重复峰值反向电压：162 V子类别：Transient Suppressors
表面贴装：NO端子面层：MATTE TIN
Base Number Matches：1

1.5KE200AG 数据手册

 浏览型号1.5KE200AG的Datasheet PDF文件第1页浏览型号1.5KE200AG的Datasheet PDF文件第2页浏览型号1.5KE200AG的Datasheet PDF文件第3页浏览型号1.5KE200AG的Datasheet PDF文件第4页浏览型号1.5KE200AG的Datasheet PDF文件第6页浏览型号1.5KE200AG的Datasheet PDF文件第7页 
1N6267A Series  
1N6373, ICTE-5, MPTE-5,  
through  
1.5KE6.8CA  
through  
1N6389, ICTE-45, C, MPTE-45, C  
1.5KE200CA  
1000  
500  
1000  
V
ꢀ=ꢀ6.8 to 13ꢀV  
V
ꢀ=ꢀ6.8 to 13ꢀV  
20ꢀV  
BR(NOM)  
BR(NOM)  
T ꢀ=ꢀ25°C  
P
T ꢀ=ꢀ25°C  
L
t ꢀ=ꢀ10ꢀms  
P
L
t ꢀ=ꢀ10ꢀms  
500  
20ꢀV  
24ꢀV  
43ꢀV  
75ꢀV  
43ꢀV  
24ꢀV  
200  
100  
50  
200  
100  
50  
20  
20  
180ꢀV  
120ꢀV  
10  
5
10  
5
2
1
2
1
0.3  
0.5 0.7  
1
2
3
5
7
10  
20 30  
(VOLTS)  
0.3  
DV , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS)  
BR(NOM)  
0.5 0.7  
1
2
3
5
7
10  
20 30  
DV , INSTANTANEOUS INCREASE IN V ABOVE V  
BR BR  
BR(NOM)  
BR  
BR  
Figure 6. Dynamic Impedance  
1
0.7  
0.5  
0.3  
0.2  
PULSE WIDTH  
10 ms  
0.1  
0.07  
0.05  
1 ms  
0.03  
0.02  
100 ms  
10 ms  
0.01  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50 100  
D, DUTY CYCLE (%)  
Figure 7. Typical Derating Factor for Duty Cycle  
APPLICATION NOTES  
RESPONSE TIME  
application, since the main purpose for adding a transient  
suppressor is to clamp voltage spikes. These devices have  
excellent response time, typically in the picosecond range  
and negligible inductance. However, external inductive  
effects could produce unacceptable overshoot. Proper  
circuit layout, minimum lead lengths and placing the  
suppressor device as close as possible to the equipment or  
components to be protected will minimize this overshoot.  
In most applications, the transient suppressor device is  
placed in parallel with the equipment or component to be  
protected. In this situation, there is a time delay associated  
with the capacitance of the device and an overshoot  
condition associated with the inductance of the device and  
the inductance of the connection method. The capacitance  
effect is of minor importance in the parallel protection  
scheme because it only produces a time delay in the  
transition from the operating voltage to the clamp voltage as  
shown in Figure 8.  
The inductive effects in the device are due to actual  
turn-on time (time required for the device to go from zero  
current to full current) and lead inductance. This inductive  
effect produces an overshoot in the voltage across the  
equipment or component being protected as shown in  
Figure 9. Minimizing this overshoot is very important in the  
Some input impedance represented by Z is essential to  
in  
prevent overstress of the protection device. This impedance  
should be as high as possible, without restricting the circuit  
operation.  
DUTY CYCLE DERATING  
The data of Figure 1 applies for non-repetitive conditions  
and at a lead temperature of 25°C. If the duty cycle increases,  
the peak power must be reduced as indicated by the curves  
of Figure 7. Average power must be derated as the lead or  
http://onsemi.com  
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