5秒后页面跳转
捷配首页

Datasheet > 二极管 > 瞬态抑制器> 1.4KESD70E3TR
1.4KESD70E3TR PDF预览

1.4KESD70E3TR

更新时间： 2024-11-09 12:59:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管电视局域网
页数 文件大小 规格书
4页 154K
描述
Trans Voltage Suppressor Diode, 1400W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC SELAD, GLASS, DO-35, 2 PIN

阅读下载

中文翻译

获取价格

1.4KESD70E3TR 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-35包装说明：O-LALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84Is Samacsys：N
其他特性：LOW CAPACITANCE最小击穿电压：77.8 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-204AHJESD-30 代码：O-LALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：1400 W
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified最大重复峰值反向电压：70 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1.4KESD70E3TR 数据手册

 浏览型号1.4KESD70E3TR的Datasheet PDF文件第2页浏览型号1.4KESD70E3TR的Datasheet PDF文件第3页浏览型号1.4KESD70E3TR的Datasheet PDF文件第4页 
1.4KESD5.0 thru 1.4KESD170CA, e3  
AXIAL-LEAD TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These small axial-leaded TVS devices feature the ability to clamp  
dangerous high voltage short-term transients such as produced by directed  
or radiated electrostatic discharge phenomena before entering sensitive  
component regions of a circuit design. They are small economical transient  
voltage suppressors targeted primarily for short-term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as illustrated in Figure #1.  
DO-35  
(DO-204AH)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Excellent protection in clamping direct ESD level  
transients in excess of 15,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
•
•
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Absorbs ESD level transients* of 1400 Watts per MIL-  
STD-750, Method 1020 (approx. 150 ns exponential  
wave, or one microsecond transients up to 400 watts.  
See Figure #1 and #2 for overall transient Peak Pulse  
Power.  
Low inherent capacitance for high-frequency  
applications (See Figure #4)  
•
•
Flexible axial-lead mounting terminals  
Bidirectional features available by adding a “C” or  
“CA” suffix  
•
•
•
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5 V to 170 V  
Hermetic DO-35 Package. Also available in surface  
mount DO-213AA MELF package (see separate data  
sheet)  
•
•
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
400 Watts for One Microsecond Square Wave or  
1400 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
•
CASE: Hermetically sealed axial-lead glass DO-35  
(DO-204AH) package  
•
FINISH: Tin-lead or RoHS Compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
•
•
•
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
•
•
•
•
POLARITY: Banded end is cathode  
WEIGHT: 0.2 grams (typical)  
MARKING: Part number  
THERMAL RESISTANCE: Less than 250oC/W  
junction to lead at 0.375 inches from body.  
•
•
•
DC power dissipation 500 mW at TL = 75oC at 3/8  
inch (10 mm) lead length from body.  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
Derate at 2.3 W/oC above 25oC for PPP (1μs) and at  
•
See package dimension on last page  
5 mW/oC above 100oC for dc power.  
Forward Surge Current 50 amps for 1μs at TL = 25oC  
(rise time > 100 ns).  
Copyright © 2006  
3-29-2006 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

下载PDF

与1.4KESD70E3TR相关器件

型号 品牌 获取价格 描述 数据表
1.4KESD70TRE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 70V V(RWM), Unidirectional,
1.4KESD75 MICROSEMI

获取价格

 		AXIAL-LEAD TVS
1.4KESD75A MICROSEMI

获取价格

 		AXIAL-LEAD TVS
1.4KESD75AE3 MICROSEMI

获取价格

 		AXIAL-LEAD TVS
1.4KESD75AE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1400W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1.4KESD75ATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1400W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1.4KESD75ATRE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 75V V(RWM), Unidirectional,
1.4KESD75C ETC

获取价格

 		Transient Voltage Suppressor
1.4KESD75CAE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1400W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD75CAE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1400W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

与1.4KESD70E3TR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证