Datasheet > 09051K5R6CBTTR

09051K5R6CBTTR

更新时间： 2024-11-21 07:57:11

品牌	Logo	应用领域
京瓷/艾维克斯 - KYOCERA AVX		/
页数	文件大小	规格书
19页	257K
描述
Film Capacitor, Silicon Dioxide And Nitride, 100V, 0.0000056uF, Surface Mount, 0905, CHIP

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09051K5R6CBTTR 数据手册

Accu-F / Accu-P

Thin-Film Technology

This accuracy sets apart these Thin-Film capacitors from

ceramic capacitors so that the term Accu has been

employed as the designation for this series of devices, an

abbreviation for “accurate.”

THE IDEAL CAPACITOR

The non-ideal characteristics of a real capacitor can be

ignored at low frequencies. Physical size imparts inductance

to the capacitor and dielectric and metal electrodes result in

resistive losses, but these often are of negligible effect on the

circuit. At the very high frequencies of radio communication

(>100MHz) and satellite systems (>1GHz), these effects

become important. Recognizing that a real capacitor will

exhibit inductive and resistive impedances in addition to

capacitance, the ideal capacitor for these high frequencies is

an ultra low loss component which can be fully characterized

in all parameters with total repeatability from unit to unit.

THIN-FILM TECHNOLOGY

Thin-film technology is commonly used in producing semi-

conductor devices. In the last two decades, this technology

has developed tremendously, both in performance and in

process control. Today’s techniques enable line definitions of

below 1µm, and the controlling of thickness of layers at 100Å

-2

(10 µm). Applying this technology to the manufacture of

Until recently, most high frequency/microwave capacitors

were based on fired-ceramic (porcelain) technology. Layers

of ceramic dielectric material and metal alloy electrode paste

are interleaved and then sintered in a high temperature oven.

This technology exhibits component variability in dielectric

quality (losses, dielectric constant and insulation resistance),

variability in electrode conductivity and variability in physical

size (affecting inductance). An alternate thin-film technology

has been developed which virtually eliminates these vari-

ances. It is this technology which has been fully incorporated

capacitors has enabled the development of components

where both electrical and physical properties can be tightly

controlled.

The thin-film production facilities at AVX consist of:

• Class 1000 clean rooms, with working areas under

laminar-flow hoods of class 100, (below 100 particles

per cubic foot larger than 0.5µm).

• High vacuum metal deposition systems for high-purity

electrode construction.

into Accu-F and Accu-P to provide high frequency capaci-

tors exhibiting truly ideal characteristics.

• Photolithography equipment for line definition down to

2.0µm accuracy.

The main features of Accu-F and Accu-P may be summa-

rized as follows:

• Plasma-enhanced CVD for various dielectric deposi-

tions (CVD=Chemical Vapor Deposition).

• High purity of electrodes for very low and repeatable

ESR.

• High accuracy, microprocessor-controlled dicing saws

for chip separation.

• Highly pure, low-K dielectric for high breakdown field,

high insulation resistance and low losses to frequencies

above 40GHz.

• High speed, high accuracy sorting to ensure strict

tolerance adherence.

• Very tight dimensional control for uniform inductance,

unit to unit.

• Very tight capacitance tolerances for high frequency

signal applications.

TERMINATION

ALUMINA

SEAL

ELECTRODE

DIELECTRIC

ALUMINA

ACCU-P^®CAPACITOR

12 3 4 5 6 7...19

中文翻译

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与09051K5R6CBTTR相关器件

型号	品牌	获取价格	描述	数据表
09055J1R3BBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000013uF, Surface Mount, 0905, CHIP
09055J1R5BBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000015uF, Surface Mount, 0905, CHIP
09055J3R9CBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000039uF, Surface Mount, 0905, CHIP
09055J4R7BBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000047uF, Surface Mount, 0905, CHIP
09055K0R4YBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000004uF, Surface Mount, 0905, CHIP
09055K130JBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 5% +Tol, 5% -Tol, 0.000013uF, Surface Mo
09055K140JBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 5% +Tol, 5% -Tol, 0.000014uF, Surface Mo
09055K2R9ABTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000029uF, Surface Mount, 0905, CHIP
09055K3R9BBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000039uF, Surface Mount, 0905, CHIP
09055K3R9CBTTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 0.0000039uF, Surface Mount, 0905, CHIP

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