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08C02SS

更新时间： 2024-02-13 02:41:21
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
4页 31K
描述
Low-Frequency General-Purpose Amplifier Applications

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08C02SS 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.58
最大集电极电流 (IC)：0.8 A集电极-发射极最大电压：15 V
配置：SINGLE最小直流电流增益 (hFE)：300
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：440 MHzBase Number Matches：1

08C02SS 数据手册

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Ordering number : EN8513  
NPN Epitaxial Planar Silicon Transistor  
Low-Frequency General-Purpose  
Amplifier Applications  
08C02SS  
Applications  
•
Low-frequency Amplifer, high-speed switching, DC / DC converter, muting circuit.  
Features  
•
•
•
Large current capacitance.  
Low collector-to-emitter saturation voltage (resistance): R (sat) typ=240mΩ [I =1A, I =50mA].  
Ultrasmall package facilitates miniaturization in end products.  
CE  
C
B
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
15  
8
V
5
V
I
0.8  
1.6  
200  
150  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
A
CP  
P
Mounted on a glass epoxy board (20✕30✕1.6mm)  
mW  
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
100  
100  
800  
I
V
V
V
V
V
=12V, I =0A  
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
Emitter Cutoff Current  
I
=4V, I =0A  
C
EBO  
DC Current Gain  
h
FE  
=2V, I =50mA  
300  
C
Gain-Bandwidth Product  
f
T
=2V, I =50mA  
C
440  
6
MHz  
pF  
mV  
mV  
V
Output Capacitance  
Cob  
=10V, f=1MHz  
Collector-to-Emitter Saturation Voltage  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Marking : YT  
V
CE  
V
CE  
V
BE  
(sat)  
(sat)  
(sat)  
I
C
I
C
I
C
I
C
I
C
=30mA, I =0.6mA  
17  
40  
250  
1.2  
B
=400mA, I =20mA  
110  
0.9  
B
=400mA, I =20mA  
B
V
V
V
=10µA, I =0A  
15  
8
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
E
=1mA, R =∞  
BE  
V
I =10µA, I =0A  
E
5
V
C
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
90505EA MS IM TA-100372  
No.8513-1/4  
1234

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