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08090 PDF预览

08090

更新时间: 2024-11-20 22:34:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
10页 205K
描述
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

08090 数据手册

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PTF080901  
LDMOS RF Power Field Effect Transistor  
90 W, 869–960 MHz  
Description  
Features  
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended  
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold  
metallization ensures excellent device lifetime and reliability.  
Broadband internal matching  
Typical EDGE performance  
- Average output power = 45 W  
- Gain = 18 dB  
- Efficiency = 40%  
EDGE Modulation Spectrum Performance  
Typical CW performance  
- Output power at P–1dB = 120 W  
- Gain = 17 dB  
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
- Efficiency = 60%  
Efficiency  
Integrated ESD protection: Human Body  
Model, Class 1 (minimum)  
Excellent thermal stability  
Low HCI drift  
Capable of handling 10:1 VSWR @ 28 V,  
90 W (CW) output power  
400 kHz  
600 kHz  
PTF080901E  
Package 30248  
36  
38  
40  
42  
44  
46  
48  
50  
Output Power (dBm)  
PTF080901F  
Package 31248  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
= 25°C unless otherwise indicated  
RF Characteristics at T  
CASE  
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
= 28 V, I = 700 mA, P = 45 W, f = 959.8 MHz  
V
DD  
DQ  
OUT  
Characteristic  
Error Vector Magnitude  
Symbol  
EVM (RMS)  
ACPR  
Min  
Typ  
2.5  
–62  
–74  
18  
Max  
Unit  
%
Modulation Spectrum @ 400 kHz  
Modulation Spectrum @ 600 kHz  
Gain  
dBc  
dBc  
dB  
ACPR  
G
ps  
Drain Efficiency  
ηD  
40  
%
Two–Tone Measurements (tested in Infineon test fixture)  
V
DD  
= 28 V, I  
= 650 mA, P = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz  
OUT  
DQ  
Characteristic  
Gain  
Symbol  
Min  
17  
Typ  
18  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
ηD  
40  
42  
%
Intermodulation Distortion  
Data Sheet  
IMD  
–32  
–29  
dBc  
1
2004-04-05  

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