Datasheet > 08051J150GBS

08051J150GBS

更新时间： 2022-05-14 22:22:25

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
25页	1134K
描述
Gallium Arsenide pHEMT RF Power Field Effect Transistor

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数据手册

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08051J150GBS 数据手册

TYPICAL CHARACTERISTICS — 3550 MHz

= 12 Vdc, I = 130 mA, f = 3550 MHz

Single--Carrier W--CDMA

3.84 MHz Channel Bandwidth

 = 0.875  --131.0_

 = 0.849  --145.8_



, OUTPUT POWER (dBm)

out

Figure 3. Single--Carrier W--CDMA Power Gain

and Drain Efficiency versus Output Power

-- 1 0

-- 2 0

-- 3 0

-- 4 0

-- 1 0

-- 1 5

-- 2 0

-- 2 5

-- 3 0

-- 3 5

= 12 Vdc, I = 130 mA, f = 3550 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

 = 0.875  --131.0_,  = 0.849  --145.8_

IRL

-- 5 0

-- 6 0

ACPR

, OUTPUT POWER (dBm)

out

Figure 4. Single--Carrier W--CDMA ACPR and

Input Return Loss versus Output Power

NOTE: All data is referenced to package lead interface. _Sand _Lare the impedances presented to the DUT.

All data is generated from load pull, not from the test circuit shown.

MRFG35010ANT1

RF Device Data

Freescale Semiconductor, Inc.

1 2 3 456 7 8...25

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