Document Number: MRFG35010AN
Rev. 4, 8/2013
Freescale Semiconductor
Technical Data
Gallium Arsenide pHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
customer premise equipment (CPE) applications.
MRFG35010ANT1
Typical Single--Carrier W--CDMA Performance: VDD = 12 Vdc, IDQ = 130 mA,
3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%
Probability on CCDF.
500--5000 MHz, 9 W, 12 V
POWER FET
GaAs pHEMT
Frequency
(MHz)
P
(W)
G
ACPR
(dBc)
D
IRL
(dB)
out
ps
(dB)
14.5
13.0
11.5
(%)
24.0
25.0
30.0
750
2140
2650
1
--44.0
--43.0
--43.0
-- 1 5
-- 1 4
-- 1 5
1
1
Features
9 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Efficiency and High Linearity
PLD--1.5
PLASTIC
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
dBm
C
Drain--Source Voltage
Gate--Source Voltage
RF Input Power
V
15
-- 5
DSS
V
GS
P
33
in
Storage Temperature Range
T
stg
--65 to +150
175
(1)
Channel Temperature
T
ch
C
Table 2. Thermal Characteristics
(2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
6.5
C/W
JC
Case Temperature 77C, 1 W CW
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Table 4. Moisture Sensitivity Level
Test Methodology
2
A
IV
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
1. For reliable operation, the operating channel temperature should not exceed 150C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2006, 2008--2009, 2012--2013. All rights reserved.
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
1