11S_40XP161A1355PR 02.9.12 4:15 PM ページ 846
Power MOS FET
NN-Channel Power MOS FET
NDMOS Structure
■Applications
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NLow On-State Resistance : 0.05Ω (max)
NUltra High-Speed Switching
NSOT-89 Package
NGate Protect Diode Built-in
■General Description
■Features
The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
Low on-state resistance: Rds (on) = 0.05Ω ( Vgs = 4.5V )
: Rds (on) = 0.07Ω ( Vgs = 2.5V )
: Rds (on) = 0.15Ω ( Vgs = 1.5V )
Ultra high-speed switching
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
Gate protect diode built-in
Operational Voltage
: 1.5V
High density mounting : SOT-89
■Pin Configuration
■Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
2
3
G
D
S
Gate
Drain
1
G
2�
D
3�
S
Source
SOT-89�
(TOP VIEW)�
�
■Equivalent Circuit
■Absolute Maximum Ratings
11
O
Ta=25 C
UNITS
SYMBOL
RATINGS
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Vdss
Vgss
Id
20
±8
4
V
V
A
Idp
Idr
Pd
16
4
A
A
1
2�
3�
2
W
Power Dissipation (note)
Channel Temperature
Storage Temperature
O
C
Tch
150
N-Channel MOS FET�
( 1 device built-in )
O
C
Tstg
- 55 ~ 150
( note ) : When implemented on a ceramic PCB
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