Datasheet > 0785_XP161A1355PR

0785_XP161A1355PR

更新时间： 2024-11-24 22:06:47

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	165K
描述
POWER MOSFET

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0785_XP161A1355PR 数据手册

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11S_40XP161A1355PR 02.9.12 4:15 PM ページ 846

Power MOS FET

NN-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance : 0.05Ω (max)

NUltra High-Speed Switching

NSOT-89 Package

NGate Protect Diode Built-in

■General Description

■Features

The XP161A1355PR is an N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Low on-state resistance: Rds (on) = 0.05Ω ( Vgs = 4.5V )

: Rds (on) = 0.07Ω ( Vgs = 2.5V )

: Rds (on) = 0.15Ω ( Vgs = 1.5V )

Ultra high-speed switching

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

Gate protect diode built-in

Operational Voltage

: 1.5V

High density mounting : SOT-89

■Pin Configuration

■Pin Assignment

NUMBER

NAME

FUNCTION

Gate

Drain

２�

３�

Source

SOT-89�

（TOP VIEW）�

�

■Equivalent Circuit

■Absolute Maximum Ratings

Ta=25 C

UNITS

SYMBOL

RATINGS

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Vdss

Vgss

±8

Idp

Idr

２�

３�

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

N-Channel MOS FET�

( 1 device built-in )

Tstg

- 55 ~ 150

( note ) : When implemented on a ceramic PCB

846

12 3 4

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