Datasheet > 03906HUF

03906HUF

更新时间： 2024-11-16 10:19:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	79K
描述
Silicon Controlled Rectifier, 63000mA I(T), 600V V(DRM)

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03906HUF 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

SILICON CONTROLLED RECTIFIER / INVERTER

• dv / dt – 200 V / usec

• Blocking voltages up to 600V

• Primarily for forced commutated

applications

• 1000 Amperes surge current

• Low forward on-state voltage

DEVICES

LEVELS

03902GPF

03904GPF

03906GPF

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

03902GPF

03904GPF

03906GPF

03902GPF

03904GPF

03906GPF

03902GPF

03904GPF

03906GPF

200

400

600

200

400

Repetitive Forward Voltage

V_DRM

Repetitive Reverse Voltage

V_RRM

600

300 min

500 min

700 min

Reverse Transient Blocking Voltage

V_RSM

Thermal Resistance, Junction to Case

Typical Thermal Resistance (greased)

0.35

0.20

°C/W

R_θJC

R_θCS

inch

pounds

Mounting Torque

25 - 30

TO-208A (TO-65)

Weight

0.56

°C

Operating Junction Temperature Range

T_J

-65°C to 125°C

-65°C to 155°C

Storage Temperature Range

T_stg

NOTE:

To specify dv/dt other than 200V/usec., enter appropriate letter in place of “G”:

K 300V/μsec., H 500V/μsec

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

RMS On-State Current

I_T(RMS)

T_C= 105°C, R_θJC= 0.35° C/W

Average On-State Current

T_C= 105°C, R_θJC= 0.35° C/W

Peak on-state Voltage

I_T(AV)

V_TM

I_H

1.8

500

_TM= 120A

Holding Current

Peak One Cycle Surge Current

T_C= 105°C, 60Hz

I_TSM

1000

I²t capability for Fusing

t = 8.3ms

I²t

4150

A²S

T4-LDS-0166 Rev. 1 (100696)

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