Datasheet > *2SC3356

*2SC3356

更新时间： 2024-11-21 14:53:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1184K
描述
SOT-23

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中文翻译

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数据手册

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*2SC3356 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SC3356 TRANSISTOR (NPN)

SOT–23

FEATURES



Low Noise and High Gain

High Power Gain

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

2. EMITTER

Collector-Base Voltage

COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

Equivalent Circuit

Collector Current

℃/W

100

200

625

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

-55～+150

℃

T_j,T_stg

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=100µA, I_E=0

Collector-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_B=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=100µA, I_C=0

V_CB=10V, I_E=0

I_EBO

V_EB=1V, I_C=0

h_FE(1)

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V, I_C=20mA

I_C=50mA, I_B=5mA

V_CE=10V,I_C=20mA

V_CB=10V, I_E=0, f=1MHz

V_CB=10V, I_C=7mA, f=1GHz

250

0.3

1.15

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

GHz

C_ob

Collector output capacitance

Noise Figure

0.8

1.65

N_F

CLASSIFICATION OF h_FE(1)

RANGE

50–100

80–160

125–250

R23

R24

R25

MARKING

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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