Datasheet > ZXTR2008Z

ZXTR2008Z

更新时间： 2022-04-11 05:27:13

品牌	Logo	应用领域
美台 - DIODES		晶体调节器晶体管输入元件
页数	文件大小	规格书
7页	257K
描述
100V INPUT, 8V 30mA REGULATOR TRANSISTOR

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ZXTR2008Z 数据手册

A Product Line of

Diodes Incorporated

ZXTR2008Z

Typical Application Circuit

Maximum Ratings (Voltage relative to GND, @T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_IN

Value

100

Unit

Input Voltage

Input Current

I_IN

Continuous Output Current

I_OUT

(Note 7)

(Note 8)

500

150

Pulsed Output Current

I_OM

Thermal Characteristics

Characteristic

Symbol

Value

1.7

Unit

(Note 5)

(Note 6)

(Note 5)

(Note 6)

(Note 9)

Power Dissipation

P_D

0.89

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead

R_{• JA}

112

°C/W

R_{• JL}

T_J

Recommended Operating Junction Temperature Range

-40 to +125

-65 to +150

°C

Maximum Operating Junction and Storage Temperature Range

T_J, T_STG

ESD Ratings (Note 10)

Characteristics

Symbols

Value

• 4000

• 300

Unit

JEDEC Class

Electrostatic Discharge – Human Body Model

Electrostatic Discharge – Machine Model

ESD HBM

ESD MM

Notes:

5. For a device mounted on 50mm X 50mm 1oz copper that is on a single-sided FR4 PCB; device measured under still air conditions whilst operating in

steady-state.

6. Same as note 5, except mounted on 15mm X 15mm 1oz copper.

7. Same as note 6, except measured with a single pulse width = 100µs and V_IN=48V.

8. Same as note 6, except measured with a single pulse width = 10ms and V_IN=48V.

9. Thermal resistance from junction to solder-point (on the exposed collector pad).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

2 of 7

www.diodes.com

May 2013

ZXTR2008Z

Document number: DS36232 Rev. 1 - 2

123 4 5 6 7

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