ZTX788A

更新时间： 2024-01-10 14:22:17

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管局域网
页数	文件大小	规格书
2页	51K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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ZTX788A 数据手册

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94

ZTX788A

FEATURES

15 Volt V_CEO

Gain of 200 at I_C=2 Amps

Very low saturation voltage

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-20

-15

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-10

-3

Continuous Collector Current

Practical Power Dissipation*

I_C

P_totp

P_tot

1.5

Power Dissipation at T_amb=25°C

derate above 25°C

5.7

mW/°C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-20

-15

-5

-30

-20

-8.5

I_C=-100µA

I_C=-10mA*

I_E=-100µA

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

-0.1

-10

V_CB=-10V

µA

V_CB=-10V, T_amb=100°C

Emitter Cut-Off Current

I_EBO

-0.1

V_EB=-4V

µA

Collector-Emitter Saturation

Voltage

V_CE(sat)

-0.025 -0.035

-0.25 -0.32

-0.28 -0.33

I_C=-0.1A, I_B=-2mA*

I_C=-2A, I_B=-20mA*

I_C=-3A, I_B=-200mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-0.85 -1.0

I_C=-2A, I_B=-20mA*

Base-Emitter

Turn-On Voltage

-0.8

IC=-2A, V_CE=-3V*

Static Forward Current

Transfer Ratio

300

250

200

800

I_C=-10mA, V_CE=-1V*

I_C=-1A, V_CE=-1V*

I_C=-2A, V_CE=-1V*

I_C=-10A, V_CE=-2V*

3-271

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