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ZTX790A PDF预览

ZTX790A

更新时间: 2024-12-09 22:18:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管开关局域网
页数 文件大小 规格书
3页 63K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX790A 数据手册

 浏览型号ZTX790A的Datasheet PDF文件第2页浏览型号ZTX790A的Datasheet PDF文件第3页 
PNP SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ISSUE 2 – APRIL 94  
ZTX790A  
FEATURES  
*
*
*
40 Volt VCEO  
Gain of 200 at IC=1 Amps  
Very low saturation voltage  
APPLICATIONS  
*
*
*
*
Darlington replacement  
Siren driver  
C
B
E
Battery powered circuits  
Motor drivers  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-50  
-40  
-5  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
-6  
A
Continuous Collector Current  
Practical Power Dissipation*  
IC  
-2  
A
Ptotp  
Ptot  
1.5  
W
Power Dissipation at Tamb=25°C  
derate above 25°C  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
-50  
-40  
-5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
-0.1  
-0.1  
VCB=-30V  
µA  
µA  
IEBO  
VEB=-4V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
-0.25  
-0.45  
-0.75  
V
V
V
IC=-500mA, IB=-5mA*  
IC=-1A, IB=-10mA*  
IC=-2A, IB=-50mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-1.0  
V
IC=-1A, IB=-10mA*  
Base-Emitter  
Turn-On Voltage  
-0.75  
V
IC=-1A, VCE=-2V*  
Static Forward Current  
Transfer Ratio  
300  
250  
200  
150  
800  
IC=-10mA, VCE=-2V  
IC=-500mA, VCE=-2V*  
IC=-1A, VCE=-2V*  
IC=-2A, VCE=-2V*  
3-279  

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