Datasheet > ZP4600-08

ZP4600-08

更新时间： 2025-09-18 18:48:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	210K
描述
D11C

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中文翻译

获取价格

数据手册

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ZP4600-08 数据手册

ZP4600 - RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

600-1600V

RRM

****************************************************************************************************************************************

GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER

Features:

ZT70cT

. All Diffused Structure

. High Surge rating

. Blocking capability up to 1600 volts

. Ceramic Housing Hermetic Package

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

All ratings are specified for Tj=25 ^oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +175 ^oC.

(1)

Device Type

ZP4600-06

ZP4600-08

ZP4600-10

ZP4600-12

ZP4600-14

ZP4600-16

RRM

600

RSM

800

1000

1200

1400

1600

1800

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 175 ^oC.

1000

1200

1400

1600

(4) See parameter definition below:

IFM

di/dt

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

trr

0.25 I

Qrr

RM(REC)

Repetitive peak

reverse leakage

5 mA

90 mA (3)

I_RRM

REVERSE RECOVERY CHARACTERIST

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

4600

7222

Typ.

Units Conditions

Average forward current

RMS forward current

Sinewave, 180^o, Tc =90℃

Nominal value

10 msec (50Hz), sinusoidal wave-

shape, 180^oconduction, Tj = 175 ℃

Peak one cycle surge

(non repetitive) current

I_FSM

50600

I square t

I²t

V_FM

V_FO

r_F

13×10⁶

1.15

A²s

10 msec

Peak forward voltage

Threshold voltage

I_FM= 3000A;Tj =25^oC

0.77

Tj=175^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

Slope resistance

0.052

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

4500

μC

μs

t_rr

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