ZP2500- RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
3600-4500V
RRM
****************************************************************************************************************************************
GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
Features:
ZT80cT
. All Diffused Structure
. High Surge rating
. Blocking capability up to 4500 volts
. Ceramic Housing Hermetic Package
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +150 oC.
V
(1)
V
(1)
Device Type
ZP2500-36
ZP2500-38
ZP2500-40
ZP2500-42
ZP2500-45
RRM
RSM
3600
3800
4000
4200
4500
3800
4000
4200
4400
4700
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 150 oC.
(4) See parameter definition below:
i
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
IFM
di/dt
trr
0.25 I
R
Repetitive peak
reverse leakage
5 mA
100 mA (3)
Qrr
I
RM(REC)
IRRM
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
2500
3925
Typ.
Units Conditions
Average forward current
RMS forward current
A
A
Sinewave, 180o , Tc =100℃
Nominal value
10 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 150 ℃
Peak one cycle surge
(non repetitive) current
IFSM
37500
A
I square t
I2t
VFM
VFO
rF
7×106
1.50
A2s
V
10 msec
Peak forward voltage
Threshold voltage
IFM= 3000A;Tj =25oC
0.85
V
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
Slope resistance
0.15
mΩ
A
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
IRM(REC)
Qrr
5500
μC
μs
trr
http://www.chinarunau.com
Page 1 of 2