Datasheet > ZCN0545A

ZCN0545A

更新时间： 2025-09-06 21:55:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关双极性晶体管
页数	文件大小	规格书
3页	119K
描述
N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT

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ZCN0545A 数据手册

N-CHANNEL ENHANCEMENT

ZCN0545A

MODE VERTICAL IGBT

ISSUE 2 MAY 94

This IGBT combines the high input impedance of the DMOSFET

with the high current density of the BJT.

FEATURES

Extremely low on state voltage

No need to derate for higher temperatures

Excellent temperature immunity

High input impedance

E-Line

Reverse blocking characteristic which is

Independent of gate bias

TO92 Compatible

Low input capacitance

Characterised for logic level drive

APPLICATIONS

Fluorescent lamp driver

Automotive load drivers

High voltage DC-DC converters

Darlington replacement

Telecoms hook switch and earth recall switch

ABSOLUTE MAXIMUM RATINGS (at T

PARAMETER

=25°C unless otherwise stated)

amb

SYMBOL

VALUE

450

UNIT

Forward Drain-Source Voltage

Reverse Drain Source Voltage

Continuous Drain Current

0.32

0.37

Practical Continuous Drain Current*

Pulsed Drain Current

@ T

=25°C

=125°C

amb

DMR

amb

Gate-Source Voltage

Power Dissipation at T

±20

0.6

=25°C

°C

amb

tot

Practical Power Dissipation*

Operating and Storage Temperature Range

0.8

T :T

-55 to +125

stg

* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.

3-112

12 3

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