Datasheet > Z0107MN0

Z0107MN0

更新时间： 2024-04-09 19:03:08

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	317K
描述
Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable plastic package intended for applications requiring enhanced immunity to noise and direct interfacing to logic level ICs and low power gate drivers.

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Z0107MN0 数据手册

WeEn Semiconductors

Z0107MN0

4Q Triac

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak off-state

voltage

600

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_sp≤ 105 °C; Fig. 1; Fig. 2;

Fig. 3

non-repetitive peak on-

state current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

Fig. 4; Fig. 5

12.5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; SIN

13.8

0.78

I²t

I²t for fusing

A²s

A/µs

dI_T/dt

rate of rise of on-state

current

I_G= 20 mA; T2+ G+

I_G= 20 mA; T2+ G-

I_G= 20 mA; T2- G-

I_G= 20 mA; T2- G+

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

T_stg

T_j

average gate power

storage temperature

junction temperature

over any 20 ms period

0.1

150

125

-40

°C

003aac270

003aac269

1.2

T(RMS)

(A)

T(RMS)

(A)

0.8

0.4

-2

-1

-50

100

150

( C)

surge duration (s)

f = 50 Hz; T_sp= 105 °C

Fig. 2. RMS on-state current as a function of solder

point temperature; maximum values

Fig. 1. RMS on-state current as a function of surge

duration; maximum values

Z0107MN0

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 September 2018

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