Datasheet > Z0103NA0

Z0103NA0

更新时间： 2024-04-09 19:02:52

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	575K
描述
Planar passivated very sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring enhanced noise immunity and direct interfacing to logic ICs and low power gate drivers.

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Z0103NA0 数据手册

WeEn Semiconductors

Z0103NA0

4Q Triac

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

0.2

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 1 A; T_j= 25 °C; Fig. 10

V_T

V_GT

on-state voltage

gate trigger voltage

1.3

1.6

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 800 V; I_T= 0.1 A; T_j= 125 °C

V_D= 800 V; T_j= 125 °C

0.2

I_D

oﬀ-state current

0.5

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 536 V; T_j= 110 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate

open circuit; Fig. 12

V/μs

dV_com/dt

rate of change of

V_D= 400 V; T_j= 110 °C; dI_com/dt = 0.44

0.5

commutating voltage

A/ms; gate open circuit

Z0103NA0

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Product data sheet

06 December 2021

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