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Z0103NN PDF预览

Z0103NN

更新时间: 2024-10-31 22:08:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极可控硅三端双向交流开关光电二极管
页数 文件大小 规格书
8页 79K
描述
1A TRIACS

Z0103NN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.12其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:3 mA最大直流栅极触发电压:1.5 V
最大维持电流:7 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大漏电流:0.01 mA
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:1 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0103NN 数据手册

 浏览型号Z0103NN的Datasheet PDF文件第2页浏览型号Z0103NN的Datasheet PDF文件第3页浏览型号Z0103NN的Datasheet PDF文件第4页浏览型号Z0103NN的Datasheet PDF文件第5页浏览型号Z0103NN的Datasheet PDF文件第6页浏览型号Z0103NN的Datasheet PDF文件第7页 
Z01  
®
1A TRIACS  
STANDARD  
Table 1: Main Features  
Symbol  
A2  
A1  
Value  
Unit  
IT(RMS)  
1
A
G
VDRM/VRRM  
600 to 800  
3 to 25  
V
IGT (Q )  
mA  
1
A2  
A1  
A2  
DESCRIPTION  
The Z01 series is suitable for general purpose AC  
switching applications. They can be found in appli-  
cations such as home appliances (electrovalve,  
pump, door lock, small lamp control), fan speed  
controllers,...  
Different gate current sensitivities are available, al-  
lowing optimized performances when controlled  
directly from microcontrollers.  
A1  
G
A2  
TO-92  
(Z01xxA)  
SOT-223  
(Z01xxN)  
Table 2: Order Codes  
Part Number  
Z01xxA  
Marking  
See page table 8 on  
page 7  
Z01xxN  
Table 3: Absolute Maximum Ratings  
Symbol  
Parameter  
SOT-223  
Value  
Unit  
Ttab = 90°C  
TL = 50°C  
RMS on-state current  
(full sine wave)  
IT(RMS)  
1
A
TO-92  
F = 50 Hz  
F = 60 Hz  
tp = 10 ms  
t = 20 ms  
8
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
ITSM  
A
t = 16.7 ms  
8.5  
²
²
²
0.35  
I t  
I t Value for fusing  
A s  
Critical rate of rise of on-state cur-  
Tj = 125°C  
dI/dt  
F = 120 Hz  
tp = 20 µs  
20  
A/µs  
rent IG = 2 x IGT , tr 100 ns  
IGM  
Tj = 125°C  
Tj = 125°C  
Peak gate current  
1
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
- 40 to + 150  
- 40 to + 125  
Storage junction temperature range  
Operating junction temperature range  
°C  
February 2005  
REV. 5  
1/8  

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