Datasheet > YQ12RSM10SDTF

YQ12RSM10SDTF

更新时间： 2024-03-03 10:11:32

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
8页	1906K
描述
The YQ12RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the trad

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YQ12RSM10SDTF 数据手册

YQ12RSM10SDTF

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Data sheet

(T =25ºC unless otherwise specified)

●Electrical Characteristics

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

T=25℃

0.63 0.67

Forward voltage

I =12A

T=125℃

T=25℃

T=125℃

0.57 0.61

μA

Reverse current

V =100V

7.8

●Thermal Characteristics ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

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Parameter

Symbol Min. Typ. Max. Unit

Thermal Resistance (Junction to case)^{(1) (2)}

℃/W

ꢀ

θJC

Thermal Resistance (Junction to ambient)^{(1) (3)}

Notes (1) Value is guaranteed by design.

90 ℃/W

θJA

ꢀ

(2) Transient dual interface measurement (TDIM) method.

(3) Mounted on 50 x 50 x 1.6mm FR4 board，single-sided copper，35μm thickness，reference footprint.

●Characteristic Curves

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www.rohm.com

2/5

2023/11/08_Rev.002

123 4 5 6 7 8

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