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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| YQ1VWM10A | ROHM |
获取价格 |
The YQ1VWM10A is a highly efficient Schottky Barrier Diode that is designed improving the |
|
| YQ1VWM10ATF | ROHM |
获取价格 |
The YQ1VWM10ATF is a highly efficient Schottky Barrier Diode that is designed improving th |
|
| YQ2061C000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ2061C0A0J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ20BGE10SD | ROHM |
获取价格 |
The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving th |
|
| YQ20BM10SDFH | ROHM |
获取价格 |
The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving t |
|
| YQ20NL10CD | ROHM |
获取价格 |
The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the |
|
| YQ20NL10CDFH | ROHM |
获取价格 |
The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving t |
|
| YQ20NL10SD | ROHM |
获取价格 |
The YQ20NL10SD is a highly efficient Schottky Barrier Diode that is designed improving the |
|
| YQ20NL10SDFH | ROHM |
获取价格 |
The YQ20NL10SDFH is a highly efficient Schottky Barrier Diode that is designed improving t |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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