Datasheet > YQ1VWM10ATF

YQ1VWM10ATF

更新时间： 2024-11-22 15:18:47

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
9页	1874K
描述
The YQ1VWM10ATF is a highly efficient Schottky Barrier Diode that is designed improving the tradeo

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YQ1VWM10ATF 数据手册

YQ1VWM10ATF

Schottky Barrier Diode

(AEC-Q101 qualified)

Data sheet

●Outline

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100

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FSM

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●Features

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High reliability

●Inner Circuit

Small power mold type

Low V and low I

Low capacitance

●Application

Switching power supply

Freewheel diode

●Packaging Specifications

Packing

Embossed Tape

Reverse polarity protection

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

180

3000

●Structure

Trench MOS structure

Taping Code

Marking

(T =25ºC unless otherwise specified)

●Absolute Maximum Ratings

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

Duty≦0.5

100

Reverse voltage

Reverse direct voltage

100

Glass epoxy mounted、

60Hzhalf sin waveform、resistive load、

Average rectified forward current

Peak forward surge current

Junction temperature⁽¹⁾

Storage temperature

T =150℃ Max.

60Hzhalf sin waveform、Non-repetitive、

FSM

one cycle、T =25℃

175

℃

stg

-55 ～ 175

℃

Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dP /dT<1/R .

th(j-a)

Attention

www.rohm.com

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1/6

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2023/09/14_Rev.001

12 3 4 5 6 7...9

中文翻译

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