5秒后页面跳转
XTR106U/2K5 PDF预览

XTR106U/2K5

更新时间: 2024-02-21 05:50:31
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
22页 587K
描述
具有电桥激励(2.5V 或 5V 基准电压)和线性化的 4mA 至 20mA 电流变送器 | D | 14 | -40 to 85

XTR106U/2K5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-14针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.38
放大器类型:INSTRUMENTATION AMPLIFIER最大平均偏置电流 (IIB):0.025 µA
最小共模抑制比:86 dB最大输入失调电流 (IIO):0.003 µA
最大输入失调电压:100 µVJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:8.65 mm
湿度敏感等级:3最大非线性:0.01%
功能数量:1端子数量:14
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TR峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Instrumentation Amplifier供电电压上限:40 V
标称供电电压 (Vsup):24 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

XTR106U/2K5 数据手册

 浏览型号XTR106U/2K5的Datasheet PDF文件第1页浏览型号XTR106U/2K5的Datasheet PDF文件第2页浏览型号XTR106U/2K5的Datasheet PDF文件第4页浏览型号XTR106U/2K5的Datasheet PDF文件第5页浏览型号XTR106U/2K5的Datasheet PDF文件第6页浏览型号XTR106U/2K5的Datasheet PDF文件第7页 
PIN CONFIGURATION  
ABSOLUTE MAXIMUM RATINGS(1)  
Power Supply, V+ (referenced to IO pin) .......................................... 40V  
Input Voltage, VI+N, VIN (referenced to IRET pin) ......................... 0V to V+  
Storage Temperature Range ....................................... 55°C to +125°C  
Lead Temperature (soldering, 10s).............................................. +300°C  
Output Current Limit ............................................................... Continuous  
Junction Temperature ................................................................... +165°C  
Top View  
DIP and SOIC  
1
2
3
4
5
6
7
VREG  
14 VREF  
5
NOTE: (1) Stresses above these ratings may cause permanent damage.  
Exposure to absolute maximum conditions for extended periods may degrade  
device reliability.  
VIN  
13  
VREF2.5  
RG  
RG  
12 Lin Polarity  
11 RLIN  
ELECTROSTATIC  
DISCHARGE SENSITIVITY  
This integrated circuit can be damaged by ESD. Texas Instru-  
ments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling  
and installation procedures can cause damage.  
+
VIN  
10 V+  
IRET  
IO  
9
8
B (Base)  
E (Emitter)  
ESD damage can range from subtle performance degrada-  
tion to complete device failure. Precision integrated circuits  
may be more susceptible to damage because very small  
parametric changes could cause the device not to meet its  
published specifications.  
PACKAGE/ORDERING INFORMATION  
For the most current package and ordering information, see  
the Package Option Addendum at the end of this data sheet.  
XTR106  
SBOS092A  
3
www.ti.com  

与XTR106U/2K5相关器件

型号 品牌 描述 获取价格 数据表
XTR106U/2K5E4 TI INSTRUMENTATION AMPLIFIER, 100uV OFFSET-MAX, PDSO14, GREEN, PLASTIC, MS-012AB, SOIC-14

获取价格

XTR106UA BB 4-20mA CURRENT TRANSMITTER with Bridge Excitation and Linearization

获取价格

XTR106UA TI 4-20mA CURRENT TRANSMITTER with Bridge Excitation and Linearization

获取价格

XTR106UA/2K5 TI 具有电桥激励(2.5V 或 5V 基准电压)和线性化的 4mA 至 20mA 电流变送器

获取价格

XTR108 BB 4-20mA, TWO-WIRE TRANSMITTER Smart Programmable with Signal Conditioning

获取价格

XTR108 TI 具有“智能”可编程信号调节的 4-20mA 两线制发送器

获取价格