Datasheet > XN01509

XN01509

更新时间： 2024-09-29 23:33:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| ARRAY \| COMM EMITTER \| NPN \| 50V V(BR)CEO \| 50MA I(C) \| SOT-25

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中文翻译

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数据手册

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XN01509 数据手册

Composite Transistors

XN01509 (XN1509)

Silicon NPN epitaxial planer transistor

Unit: mm

For high-frequency amplification

2.8^+0.2

1.5^+0.25

0.3

0.65 0.15

0.05

0.65 0.15

Features

Two elements incorporated into one package.

(Emitter-coupled transistors)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SC4561 × 2 elements

0.1 to 0.3

0.4 0.2

Absolute Maximum Ratings (Ta=25˚C)

1 : Collector (Tr1)

2 : Collector (Tr2)

3 : Base (Tr2)

4 : Emitter

5 : Base (Tr1)

EIAJ : SC–74A

Mini Type Pakage (5–pin)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Total power dissipation

Rating

Marking Symbol: AN

Internal Connection

element

˚C

P_T

200

Tr1

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

I_C= 10µA, I_E= 0

V_CEO

V_EBO

I_CBO

I_CEO

h_FE

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

V_CB= 10V, I_E= 0

V_CE= 10V, I_B= 0

V_CE= 10V, I_C= 2mA

0.1

100

500

µA

Collector cutoff current

Forward current transfer ratio

200

0.5

Forward current transfer h_FEratio

h_FE(small/large)^*1V_CE= 10V, I_C= 2mA

0.99

0.06

250

1.5

Collector to emitter saturation voltage V_CE(sat)

I_C= 10mA, I_B= 1mA

0.3

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –2mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

Collector output capacitance

^*1Ratio between 2 elements

C_ob

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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与XN01509相关器件

型号	品牌	获取价格	描述	数据表
XN01509(XN1509)	ETC	获取价格	Composite Device - Composite Transistors
XN01509\|XN1509	ETC	获取价格	Composite Device - Composite Transistors
XN01531	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| COMM EMITTER \| NPN \| 10V V(BR)CEO \| 50MA I(C) \| SOT-25
XN01531(XN1531)	ETC	获取价格	Composite Device - Composite Transistors
XN01531\|XN1531	ETC	获取价格	Composite Device - Composite Transistors
XN01558	PANASONIC	获取价格	Silicon NPN epitaxial planar type For low-frequency amplification
XN01558(XN1558)	ETC	获取价格	複合デバイス－複合トランジスタ
XN01558\|XN1558	ETC	获取价格	Composite Device - Composite Transistors
XN01601	PANASONIC	获取价格	Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2
XN01601(XN1601)	ETC	获取价格	Composite Device - Composite Transistors