Datasheet > XN01214|XN1214

XN01214|XN1214

更新时间： 2024-09-29 23:33:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	85K
描述
Composite Device - Composite Transistors

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XN01214|XN1214 数据手册

Composite Transistors

XN01214 (XN1214)

Silicon NPN epitaxial planar type

Unit: mm

+0.20

–0.05

1.9 0.1

(0.95) (0.95)

2.90

For switching/digital circuits

+0.10

–0.06

0.16

■ Features

• Two elements incorporated into one package

(Emitter-coupled transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

+0.10

–0.05

0.30

10˚

■ Basic Part Number

• UNR2214 (UN2214) × 2

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Collector (Tr1)

2: Collector (Tr2)

3: Base (Tr2)

4: Emitter

5: Base (Tr1)

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

EIAJ: SC-74A

Mini5-G1 Package

Collector current

I_C

P_T

T_j

100

°C

Marking Symbol: 9H

Total power dissipation

Junction temperature

Storage temperature

300

150

Internal Connection

T_stg

−55 to +150

°C

Tr2

Tr1

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

h_FERatio ^*

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

V_CE= 10 V, I_C= 5 mA

0.1

0.5

0.2

µA



I_CEO

I_EBO

h_FE

h_FE(SmallV_CE= 10 V, I_C= 5 mA

/Large)

0.50

0.99



Collector-emitter saturation voltage

Output voltage high-level

Output voltage low-level

Input resistance

V_CE(sat)I_C= 10 mA, I_B= 0.3 mA

0.25

V_OH

V_OL

R₁

V_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

4.9

V_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

0.2

+30%

0.25

−30%

kΩ



Resistance ratio

R₁/ R₂

f_T

0.17

0.21

150

Transition frequency

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00020BED

12 3

中文翻译

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与XN01214|XN1214相关器件

型号	品牌	获取价格	描述	数据表
XN01214G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS CO
XN01215	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XN01215(XN1215)	ETC	获取价格	複合デバイス－複合トランジスタ
XN01215\|XN1215	ETC	获取价格	Composite Device - Composite Transistors
XN01216	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-74A
XN01216(XN1216)	ETC	获取价格	Composite Device - Composite Transistors
XN01216\|XN1216	ETC	获取价格	Composite Device - Composite Transistors
XN01217	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-74A
XN01217(XN1217)	ETC	获取价格	複合デバイス－複合トランジスタ
XN01217\|XN1217	ETC	获取价格	Composite Device - Composite Transistors

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