Datasheet > XMG3522R030QRQSTQ1

XMG3522R030QRQSTQ1

更新时间： 2023-09-03 20:35:37

品牌	Logo	应用领域
德州仪器 - TI		驱动驱动器
页数	文件大小	规格书
41页	2549K
描述
具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET \| RQS \| 52 \| -40 to 150

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LMG3522R030-Q1

ZHCSNE5C –OCTOBER 2020 –REVISED JUNE 2023

www.ti.com.cn

6.3 Recommended Operating Conditions (continued)

Unless otherwise noted: voltages are in respect to SOURCE connected to reference ground.

MIN NOM MAX UNIT

R_RDRVRDRV to SOURCE resistance from external slew-rate control resistor

C_VNEGVNEG to SOURCE capacitance from external bypass capacitor

L_BBSWBBSW to SOURCE inductance from external buck-boost inductor ⁽¹⁾

500

kΩ

µF

4.7

10 µH

(1) > 1-A current rating is recommended.

6.4 Thermal Information

LMG3522R030

THERMAL METRIC⁽¹⁾

RQS (VQFN)

52 PINS

0.28

UNIT

R_θJC(top)

Junction-to-case (top) thermal resistance

°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Electrical Characteristics

Unless otherwise noted: voltage, resistance, capacitance, and inductance are in respect to SOURCE connected with

reference ground; –40 ℃≤T_J≤125 ℃;

V_DS= 520 V; 9 V ≤V_VDD≤18 V; V_IN= 0 V; RDRV connected to LDO5V; L_BBSW= 4.7 µH

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GAN POWER TRANSISTOR

V_IN= 5 V, T_J= 25°C

3.6

mΩ

R_DS(on)

Drain-source on resistance

V_IN= 5 V, T_J= 125°C

I_S= 0.1 A

Third-quadrant mode source-drain

voltage

V_SD

I_S= 20 A

V_DS= 650 V, T_J= 25°C

V_DS= 650 V, T_J= 125°C

V_DS= 400 V

µA

I_DSS

Drain leakage current

Output capacitance

235

C_OSS

C_O(er)

Energy related effective output

capacitance

320

V_DS= 0 V to 400 V

C_O(tr)

Q_OSS

Q_RR

Time related effective output capacitance

Output charge

460

190

Reverse recovery charge

VDD –SUPPLY CURRENTS

V_DDquiescent current

V_VDD= 12 V, V_IN= 0 V or 5 V

700

1200

µA

V_VDD= 12 V, f_IN= 140 kHz, soft-

switching

V_DDoperating current

15.5

BUCK BOOST CONVERTER

VNEG output voltage

VNEG sinking 50 mA

–14

Peak BBSW sourcing current at low peak

I_BBSW,PK(lcurrent mode setting

(peak external buck-boost inductor

0.3

0.8

0.4

0.5

1.2

ow)

current)

Peak BBSW sourcing current at low peak

I_BBSW,PK(current mode setting

(peak external buck-boost inductor

high)

current)

English Data Sheet: SNOSD97

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