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XMG3522R030QRQSTQ1 PDF预览

XMG3522R030QRQSTQ1

更新时间: 2023-09-03 20:35:37
品牌 Logo 应用领域
德州仪器 - TI 驱动驱动器
页数 文件大小 规格书
41页 2549K
描述
具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET | RQS | 52 | -40 to 150

XMG3522R030QRQSTQ1 数据手册

 浏览型号XMG3522R030QRQSTQ1的Datasheet PDF文件第1页浏览型号XMG3522R030QRQSTQ1的Datasheet PDF文件第2页浏览型号XMG3522R030QRQSTQ1的Datasheet PDF文件第4页浏览型号XMG3522R030QRQSTQ1的Datasheet PDF文件第5页浏览型号XMG3522R030QRQSTQ1的Datasheet PDF文件第6页浏览型号XMG3522R030QRQSTQ1的Datasheet PDF文件第7页 
LMG3522R030-Q1  
ZHCSNE5C OCTOBER 2020 REVISED JUNE 2023  
www.ti.com.cn  
5 Pin Configuration and Functions  
DRAIN  
16  
15 14  
13 12 11 10  
9
8
7
6
5
4
3
2
1
NC2  
17  
52  
NC2  
18  
19  
20  
21  
22  
23  
24  
25  
26  
51  
50  
49  
48  
47  
46  
45  
44  
43  
LDO5V  
RDRV  
TEMP  
OC  
THERMAL PAD  
NC2  
FAULT  
IN  
VDD  
NC2  
27  
28 29  
30 31 32 33 34 35 36 37  
38 39 40 41  
42  
SOURCE  
VNEG  
5-1. RQS Package, 52-Pin VQFN (Top View)  
5-1. Pin Functions  
PIN  
TYPE(1)  
DESCRIPTION  
NAME  
NC1  
NO.  
1, 16  
215  
Used to anchor QFN package to PCB. Pins must be soldered to PCB landing pads. The PCB landing pads are  
non-solder mask defined pads and must not be physically connected to any other metal on the PCB. Internally  
connected to DRAIN.  
DRAIN  
NC2  
P
GaN FET drain. Internally connected to NC1.  
Used to anchor QFN package to PCB. Pins must be soldered to PCB landing pads. The PCB landing pads are  
non-solder mask defined pads and must not be physically connected to any other metal on the PCB. Internally  
connected to SOURCE and THERMAL PAD.  
17, 27, 43, 47,  
52  
SOURCE  
VNEG  
P
P
GaN FET source. Internally connected to NC2 and THERMAL PAD.  
1826, 2839  
Internal buck-boost converter negative output. Used as the negative supply to turn off the depletion mode GaN  
FET. Bypass to SOURCE with a 2.2-µF capacitor.  
40, 41  
BBSW  
VDD  
IN  
42  
44  
45  
46  
P
P
I
Internal buck-boost converter switch pin. Connect an inductor from this point to SOURCE.  
Device input supply.  
CMOS-compatible non-inverting input used to turn the FET on and off.  
Push-pull digital output that asserts low during a fault condition. Refer to Fault Detection for details.  
FAULT  
O
Push-pull digital output that asserts low during overcurrent and short-circuit fault conditions. Refer to Fault  
Detection for details.  
OC  
48  
49  
50  
51  
O
O
I
Push-pull digital output that gives information about the GaN FET temperature. Outputs a fixed 9-kHz pulsed  
waveform. The device temperature is encoded as the duty cycle of the waveform.  
TEMP  
RDRV  
LDO5V  
Drive-strength selection pin. Connect a resistor from this pin to SOURCE to set the turn-on drive strength to  
control slew rate. Tie the pin to SOURCE to enable 150 V/ns and tie the pin to LDO5V to enable 100 V/ns.  
5-V LDO output for external digital isolator. If using this externally, connect a 0.1-µF or greater capacitor to  
SOURCE.  
P
Copyright © 2023 Texas Instruments Incorporated  
Submit Document Feedback  
3
Product Folder Links: LMG3522R030-Q1  
English Data Sheet: SNOSD97  
 
 

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