LMG3422R030, LMG3425R030
SNOSDA7C – AUGUST 2020 – REVISED DECEMBER 2021
LMG342xR030 600-V 30-mΩ GaN FET With Integrated Driver, Protection, and
Temperature Reporting
1 Features
3 Description
•
Qualified for JEDEC JEP180 for hard-switching
topologies
600-V GaN-on-Si FET with Integrated gate driver
– Integrated high precision gate bias voltage
– 200-V/ns CMTI
The LMG342xR030 GaN FET with integrated driver
and protection enables designers to achieve new
levels of power density and efficiency in power
electronics systems.
•
The LMG342xR030 integrates a silicon driver that
enables switching speed up to 150 V/ns. TI’s
integrated precision gate bias results in higher
switching SOA compared to discrete silicon gate
drivers. This integration, combined with TI's low-
inductance package, delivers clean switching and
minimal ringing in hard-switching power supply
topologies. Adjustable gate drive strength allows
control of the slew rate from 20 V/ns to 150 V/ns,
which can be used to actively control EMI and
optimize switching performance. The LMG3425R030
includes ideal diode mode, which reduces third-
quadrant losses by enabling adaptive dead-time
control.
– 2.2-MHz switching frequency
– 30-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
– Operates from 7.5-V to 18-V supply
Robust protection
– Cycle-by-cycle overcurrent and latched short-
circuit protection with < 100-ns response
– Withstands 720-V surge while hard-switching
– Self-protection from internal overtemperature
and UVLO monitoring
•
•
Advanced power management
– Digital temperature PWM output
– Ideal diode mode reduces third-quadrant losses
in LMG3425R030
Advanced power management features include digital
temperature reporting and fault detection. The
temperature of the GaN FET is reported through
a variable duty cycle PWM output, which simplifies
managing device loading. Faults reported include
overtemperature, overcurrent, and UVLO monitoring.
2 Applications
•
•
•
•
•
High density industrial power supplies
Solar inverters and industrial motor drives
Uninterruptable power supplies
Merchant network and server PSU
Merchant telecom rectifiers
Device Information
PART NUMBER
LMG3422R030
PACKAGE (1)
BODY SIZE (NOM)
VQFN (54)
12.00 mm × 12.00 mm
LMG3425R030 (2)
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
(2) Device is ADVANCE INFORMATION.
DRAIN
Direct-Drive
Slew
GaN
Rate
SOURCE
RDRV
IN
VDD
VNEG
LDO,
BB
OCP, SCP,
OTP, UVLO
Current
LDO5V
TEMP
FAULT
OC
SOURCE
Simplified Block Diagram
Switching Performance at > 100 V/ns
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION
DATA.
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