XB1007-BD
Buffer Amplifier
4 - 11 GHz
Rev. V2
MTTF:
These numbers were calculated based on accelerated life test information and thermal model analysis
received from the fabricating foundry.
1.0E+16
1.0E+15
220
200
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
1.0E+14
1.0E+13
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
180
160
140
120
100
80
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
60
40
20
30
40
50
60
70
80
90
100
110
120
20
30
40
50
60
70
80
90
100
110
120
Application Notes:
[1] Biasing -
The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is
recommended to bias this device at VD = 4 V with ID = 90 mA (VG2 at approximately -0.5 V and VG1 left open). It is
also recommended to use active biasing to control the drain currents because this gives the most reproducible
results over temperature or RF level variations. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low
value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to
maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5 V.
Typically the gate is protected with silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
[2] Bias Arrangement -
For Individual Stage Bias (recommended for saturated applications) each DC pad (VD and VG1,2) needs to have
DC bypass capacitance (~100 - 200 pF) as close to the device as possible. Additional DC bypass capacitance
(~0.01 µF) is also recommended.
[3] Packaging -
MACOM recommends to include a hydrogen getter for situations where this part is being used in a hermetically
sealed package.
9
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DC-0008227